Datasheet ON Semiconductor MMBTA42 — Даташит

MMBTA42 PZTA42
C C E E
C B TO-92 SOT-23 E C
B B SOT-223 Mark: 1D NPN High Voltage Amplifier
This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48. Absolute Maximum Ratings*
Symbol TA = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current -Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics
Symbol
PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max
MPSA42
625
5.0
83.3 *MMBTA42
350
2.8 **PZTA42
1,000
8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." …