Datasheet Vishay Si3430DV-T1-GE — Даташит

Si3430DV
www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET
FEATURES TSOP-6 Single D
6 S
4 D
5 • High-efficiency PWM optimized
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available 1
D
Top View 2
D 3
G (1, 2, 5, 6) D PRODUCT SUMMARY (3) G VDS (V) 100 RDS(on) max. (Ω) at VGS = 10 V 0.170 RDS(on) max. (Ω) at VGS = 6 V 0.185 Qg typ. (nC) 5.5 ID (A) 2.4 Configuration (4) S Single N-Channel MOSFET ORDERING INFORMATION
Package TSOP-6 Lead (Pb)-free Si3430DV-T1-E3 Lead (Pb)-free and halogen-free Si3430DV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 5s STEADY STATE Drain-source voltage VDS 100 100 Gate-source voltage VGS ± 20 ± 20 Continuous drain current (TJ = 175 °C) a TA = 25 °C
TA = 85 °C Pulsed drain current
Avalanche current
Repetitive avalanche energy (duty cycle ≤ 1 %) IDM
L = 0.1 mH Continuous source current (diode conduction) a
Maximum power dissipation a ID TA = 25 °C
TA = 85 °C Operating junction and storage temperature range 2.4 1.8 1.7 1.3 8 8 UNIT …