Datasheet NXP BF909,235 — Даташит

BF909; BF909R
N-channel dual gate MOS-FETs
Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
-NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
-© Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
-© NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors NXP Semiconductors Product specification N-channel dual gate MOS-FETs transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC. FEATURES
• Specially designed for use at 5 V supply voltage …