Datasheet Central Semiconductor CBRHDSH2-100 TR13 — Даташит

CBRSDSH2-60
SURFACE MOUNT
2 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRSDSH2-60 is
a full wave bridge rectifier mounted in a durable epoxy
surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
FEATURES:
• Low Leakage Current (70μA MAX @ VRRM)
• Low VF Schottky Diodes (600mV MAX @ IF=2.0A) SMDIP CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current (8.3ms)
Operating and Storage Junction Temperature SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
TJ, Tstg 60 UNITS …

CBRSDSH2-100
SURFACE MOUNT SILICON
HIGH DENSITY
2.0 AMP
SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRSDSH2-100 is
a full wave bridge rectifier mounted in a durable epoxy
surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
FEATURES:
• High 2.0A Current Rating SMDIP CASE • Low VF Schottky Diodes (700mV MAX @ IF=2.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=75°C)
Peak Forward Surge Current (8.3ms) SYMBOL
VRRM
VR
VR(RMS)
IO 100 UNITS
V 100 V 70 V 2.0 A 110 A Operating Junction Temperature IFSM
TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C MAX
50 UNITS …

CBRHDSH2-100
SURFACE MOUNT
HIGH DENSITY
2 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is
a full wave bridge rectifier mounted in a durable epoxy
surface mount case, utilizing glass passivated chips.
MARKING CODE: CSH10
FEATURES: HD DIP CASE
• Device is Halogen Free by design • Low Leakage Current (700nA TYP @ VRRM)
• High 2.0A Current Rating
• Low VF Schottky Diodes (840mV MAX @ IF=2.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=75°C)
Peak Forward Surge Current (8.3ms) SYMBOL UNITS VRRM
VR 100 V 100 V VR(RMS)
IO 70 V 2.0 A 50 A Operating Junction Temperature IFSM
TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS IR
VF VR=100V …