Datasheet NTE Electronics NTE326 — Даташит

NTE326
Silicon P−Channel JFET Transistor
General Purpose AF Amplifier
TO92 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Gate Voltage, VDG 40V
Reverse Gate−Source Voltage, VGSR . 40V
Forward Gate Current, IG(f) 10mA
Total Device Dissipation (TA = +25C), PD . 310mW
Derate Above 25C 2.82mW/C
Operating Junction Temperature Range, TJ −65 to +135C
Storage Temperature Range, Tstg −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit 40 − − V VGS = 20V, VDS = 0 − − 5 nA VGS = 20V, VDS = 0, TA = +100C − − 1 A ID = 1A, VDS = 15V 1.0 − 7.5 V VGS ID = 0.2mA, VDS = 15V 0.8 − 4.5 V IDSS VDS = 15V, VGS = 0, f = 1kHz 2 − 9 mA Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1500 − 5000 mho Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz − − 75 mho Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz − 5 7 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz − 1 2 pF Noise Figure NF VDS = 15V, VGS = 0, RG = 1M,
f = 100Hz, BW = 1Hz − 1.0 2.5 dB Equivalent Short−Circuit Input Noise
Voltage en VDS = 15V, VGS = 0, f = 100Hz,
BW = 1Hz − 60 115 nV/pHz OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
Gate−Source Voltage V(BR)GSS IG = 10A, VDS = 0
IGSS
VGS(off) ON Characteristics …