Datasheet Vishay SI2369DS-T1-GE3 — Даташит

Si2369DS
www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET
FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET
D
3 • 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S APPLICATIONS
• For mobile computing
-Load switch
-Notebook adaptor switch
-DC/DC converter 1
G
Top View Marking code: H9 S G PRODUCT SUMMARY
VDS (V) -30 RDS(on) max. () at VGS = -10 V 0.029 RDS(on) max. () at VGS = -6 V 0.034 RDS(on) max. () at VGS = -4.5 V 0.040 Qg typ. (nC) 11.4 ID (A) a -7.6 Configuration D
P-Channel MOSFET Single ORDERING INFORMATION
Package SOT-23 Lead (Pb)-free and halogen-free Si2369DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS ± 20 TC = 25 °C -6.1 ID TA = 25 °C -5.4 b, c
-4.3 b, c TA = 70 °C
Pulsed drain current (t = 100 μs) IDM
TC = 25 °C Continuous source-drain diode current -2.1 …