Datasheet Microsemi 2N5031 — Даташит

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855 2N5031
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC • Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 2
1 3
4 1. Emitter
2. Base
3. Collector
4. Case TO-72 DESCRIPTION:
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial
equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO Parameter
Collector-Emitter Voltage Value
10 Unit
Vdc VCBO Collector-Base Voltage 15 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 20 mA 200
1.14 mWatts
mW/ ºC Thermal Data
P D Total Device Dissipation @ TA = 25ºC …