MBR2090CT-M3, MBR20100CT-M3
www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology TMBS ® • Lower power losses, high efficiency TO-220AB • Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106 2 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 3 TYPICAL APPLICATIONS 1
PIN 1 PIN 2 PIN 3 CASE For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application. MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV) 2 x 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C Package TO-220AB Diode variation Common cathode Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 -halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked
Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2090CT MBR20100CT UNIT Max. repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V VDC 90 100 V Max. DC blocking voltage
Max. average forward rectified current at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave …
