Datasheet Vishay SI1470DH-T1-GE3 — Даташит

Si1470DH
Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
30 RDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC Qg (Typ.)
4.85 SOT-363
SC-70 (6-LEADS) APPLICATIONS
• Load Switch D 1 6 D D D G 5 2 3 4 D AK XX YY Marking Code Lot Traceability
and Date Code S G Part # Code
Top View S Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free)
Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TC = 25 °C 5.1 TC = 70 °C 4.0 TA = 25 °C ID Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current L = 0.1 mH
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C IDM 12 IAS 10 EAS 5 mJ 2.3 IS A 1.3b, c
2.8
1.8 PD W 1.5b, c …