Datasheet ON Semiconductor 2N5401RL1G — Даташит

2N5401
Amplifier Transistor
Features
• Collector-Emitter Voltage: VCEO = 150V
• Collector Dissipation: PC (max) = 625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
TO-92 1 1. Emitter 2. Base 3. Collector Ordering Information
Part Number Top Mark Package Packing Method Pack Quantity 2N5401YBU 2N5401 TO-92 3L Bulk 10000 2N5401YTA 2N5401 TO-92 3L Ammo 2000 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V -600 mA -55 to 150 C IC
TJ, TSTG Collector Current
Operating and Storage Junction Temperature Range © 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1 www.fairchildsemi.com
1 2N5401 — Amplifier Transistor May 2016 Values are at TA = 25C unless otherwise noted. Symbol
PD
RJA Parameter Max. Total Device Dissipation 625 mW 5 mW/C 200 C/W Derate above 25C
Thermal Resistance, Junction to Ambient Unit Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
BVCBO Parameter Conditions Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO (2) Min. Typ. Max. Unit IC = -100 A, IE = 0 -160 V IC = -1 mA, IB = 0 -150 V -5 Emitter-Base Breakdown Voltage IE = -10 A, IC = 0 ICBO Collector Cut-Off Current VCB = -120 V, IE = 0 -50 A IEBO Emitter Cut-Off Current VEB = -3 V, IC = 0 -50 A IC = -1 mA, VCE = -5 V
hFE1 DC Current Gain(2) IC = -10 mA,
VCE = -5 V Collector-Emitter Saturation Voltage(2) VBE(sat) Base-Emitter Saturation Voltage(2) fT
Cob …