Datasheet STMicroelectronics BAT49 — Даташит

BAT 49 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges. DO 41
(Glass) ABSOLUTE RATINGS (limiting values)
Symbol
VRRM Parameter
Repetitive Peak Reverse Voltage Value Unit 80 V 500 mA Forward Continuous Current* Ta = 70 °C IFRM Repetitive Peak Forward Current* tp = 1s
δ ≤ 0.5 3 A IFSM Surge non Repetitive Forward Current* tp ≤ 10ms 10 A Tstg
Tj Storage and Junction Temperature Range -65 to 150
-65 to 125 °C
°C TL Maximum Lead Temperature for Soldering during 10s at 4mm
from Case 230 °C IF THERMAL RESISTANCE
Symbol
Rth(j-a) Test Conditions
Junction-ambient* Value Unit 110 °C/W ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit IR * * Tj = 25°C VR = 80V 200 µA VF * * Tj = 25°C IF = 10mA 0.32 V Tj = 25°C IF = 100mA 0.42 Tj = 25°C IF = 1A 1 DYNAMIC CHARACTERISTICS
Symbol
C Test Conditions
Tj = 25°C f = 1MHz Min. Typ. VR = 0V 120 VR = 5V 35 Max. Unit
pF * On infinite heatsink with 4mm lead length
** Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed : 1A 1/4 BAT 49 …