Datasheet ON Semiconductor MMBT2369 — Даташит

MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92
1 Mark: 1J Absolute Maximum Ratings * T a Symbol 1. Emitter 2. Base 3. Collector = 25×C unless otherwise noted Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current ICP **Collector Current (Pulse) TJ, TSTG Operating and Storage Junction Temperature Range -Continuous 4.5 V 200 mA 400 mA -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted Max. Units PD Symbol
Total Device Dissipation
Derate above 25°C Parameter 350
2.8 mW
mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”. © 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com
1 MMBT2369 / PN2369 — NPN Switching Transistor February 2008 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10μA, VBE = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 4.5 ICBO Collector Cutoff Current VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C V
0.4
30 μA
μA On Characteristics
hFE DC Current Gain * IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 40 …