Datasheet Diodes ZTX690BSTZ — Даташит

NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR ZTX690B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. Transition Frequency fT 150 TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V
f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 16 pF VCB=10V, f=1MHz Switching Times ton
toff 33
1300 ns
ns IC=500mA, IB!=50mA
IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZTX690B ISSUE 1 – MAY 94
FEATURES
* 45 Volt VCEO
* Gain of 400 at IC=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers
* Battery powered circuits
* Motor drivers C
B E E-Line
TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL
Rth(j-amb)1 …