NIKO-SEM P2503NPG N-& P-Channel Enhancement Mode
Field Effect Transistor DIP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY D1 V(BR)DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 45mΩ -5A D1 D2 D2 G : GATE
D : DRAIN
S : SOURCE
#1S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 7 -5 6 -4 IDM 20 -20 IAS 18 -18 TC = 25 °C Continuous Drain Current
Pulsed Drain Current ID TC = 70 °C 1 Avalanche Current
Avalanche Energy L = 0.1mH EAS TC = 25 °C Power Dissipation 19 Junction & Storage Temperature Range Tj, Tstg mJ 2.5 PD TC = 70 °C A W 1.6
-55 to 150 °C THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL RθJA MAXIMUM UNITS 50 °C / W 1 Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage VGS = 0V, ID = 250µA N-Ch 30 VGS = 0V, ID = -250µA P-Ch -30 VDS = VGS, ID = 250µA N-Ch 1 1.5 2.5 P-Ch -1 -1.5 -2.5 V(BR)DSS VGS(th)
VDS = VGS, ID = -250µA V REV 1.2
1 Feb-09-2010 NIKO-SEM P2503NPG N-& P-Channel Enhancement Mode
Field Effect Transistor DIP-8 Halogen-Free & Lead-Free Gate-Body Leakage VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 IGSS VDS = -24V, VGS = 0V
Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 55 °C
1 On-State Drain Current ID(ON) VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 6A 1 Drain-Source On-State Resistance VGS = -4.5V, ID = -4A N-Ch 20 P-Ch -20 A N-Ch 25 37 P-Ch 58 80
mΩ N-Ch 18 25 P-Ch 34 45 N-Ch 19 P-Ch 11 N-Ch 790 N-Channel P-Ch 690 VGS = 0V, VDS = 10V, f = 1MHz N-Ch 175 P-Channel P-Ch 310 VGS = 0V, VDS = -10V, f = 1MHz N-Ch 65 P-Ch 75 N-Ch 2 P-Ch 6.25 VGS = -10V, ID = -5A
1 µA RDS(ON) …
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