Datasheet HGTG30N60A4 - Fairchild Даташит IGBT, N, TO-247 — Даташит
Наименование модели: HGTG30N60A4
![]() 60 предложений от 27 поставщиков БТИЗ транзистор, 75 А, 2.6 В, 463 Вт, 600 В, TO-247, 3 вывод(-ов) | |||
HGTG30N60A4 ON Semiconductor | 407 ₽ | ||
HGTG30N60A4D Fairchild | 445 ₽ | ||
HGTG30N60A4 Fairchild | от 549 ₽ | ||
HGTG30N60A4D_NL Intersil | по запросу |
Подробное описание
Производитель: Fairchild
Описание: IGBT, N, TO-247
Краткое содержание документа:
HGTG30N60A4
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343.
Features
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 75 А
- Collector Emitter Voltage Vces: 2.6 В
- Power Dissipation Max: 463 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Корпус транзистора: TO-247
- Количество выводов: 3
- SVHC: No SVHC (18-Jun-2010)
- Alternate Case Style: SOT-249
- Current Ic Continuous a Max: 75 А
- Current Temperature: 25°C
- Device Marking: HGTG30N60A4
- Fall Time tf: 38 нс
- Full Power Rating Temperature: 25°C
- Количество транзисторов: 1
- Package / Case: TO-247
- Pin Format: GCE
- Power Dissipation: 463 Вт
- Power Dissipation Pd: 463 Вт
- Power Dissipation Ptot Max: 463 Вт
- Pulsed Current Icm: 240 А
- Rise Time: 12 нс
- SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
- Termination Type: Through Hole
- Полярность транзистора: N
- Voltage Vces: 600 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5