Datasheet HGTP12N60A4D - Intersil Даташит IGBT, TO-220 — Даташит

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Подробное описание

Производитель: Intersil

Описание: IGBT, TO-220

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Краткое содержание документа:
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet November 1999 File Number 4697.3
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337.
Features

Спецификации:

• Тип транзистора: IGBT
• Max Voltage Vce Sat: 2.7 В
• Collector-to-Emitter Breakdown Voltage: 600 В
• Корпус транзистора: TO-220
• Количество выводов: 3
• SVHC: Cobalt dichloride (18-Jun-2010)
• Корпус: TO-220
• Fall Time Tf: 18 нс
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 54 А
• Количество транзисторов: 1
• Power Dissipation: 167 Вт
• Power Dissipation Pd: 167 Вт
• Pulsed Current Icm: 96 А
• Rise Time: 8 нс
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Полярность транзистора: N

Дополнительные аксессуары:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5