Datasheet HGT1S20N60A4S9A - Fairchild Даташит IGBT, D2-PAK, 600 В — Даташит

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Подробное описание

Производитель: Fairchild

Описание: IGBT, D2-PAK, 600 В

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Краткое содержание документа:
HGT1S20N60A4S9A
Data Sheet March 2006
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339.
Features

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 70 А
• Max Voltage Vce Sat: 2.7 В
• Max Power Dissipation: 290 Вт
• Collector-to-Emitter Breakdown Voltage: 600 В
• Operating Temperature Range: -55°C to +150°C
• Корпус транзистора: D2-PAK
• Количество выводов: 3
• SVHC: No SVHC (18-Jun-2010)
• Alternate Case Style: TO-263
• Корпус: D2-PAK
• Current Ic @ Vce Sat: 20 А
• Current Temperature: 25°C
• Fall Time Tf: 32 нс
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 0.43°C/W
• Max Current Ic Continuous a: 70 А
• Max Junction Temperature Tj: 150°C
• Min Junction Temperature, Tj: -55°C
• Количество транзисторов: 1
• Power Dissipation: 290 Вт
• Power Dissipation Pd: 290 Вт
• Pulsed Current Icm: 280 А
• Rise Time: 12 нс
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: SMD
• Полярность транзистора: N Channel
• Voltage Vces: 600 В

RoHS: Y-Ex

Дополнительные аксессуары:

• Fischer Elektronik - WLK 5
• Fischer Elektronik - WLPG 02