Datasheet IKP04N60T - Infineon Даташит IGBT, N, 600 В, 4 А, TO-220 — Даташит
Наименование модели: IKP04N60T
 Купить IKP04N60T на РадиоЛоцман.Цены — от 85 до 374 ₽11 предложений от 11 поставщиков Транзистор IGBT, Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3Pin | |||
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Подробное описание
Производитель: Infineon
Описание: IGBT, N, 600 В, 4 А, TO-220
Скачать Data SheetКраткое содержание документа:
TrenchStop® Series
IKP04N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Drives ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V IC 4A VCE(sat),Tj=25°C 1.5 V Tj,max 175 °C Marking K04T60 Package PG-TO-220-3-1
C
Спецификации:
- Тип транзистора: IGBT
- Max Voltage Vce Sat: 2.05 В
- Collector-to-Emitter Breakdown Voltage: 600 В
- Корпус транзистора: TO-220
- Корпус: TO-220
- Max Current Ic Continuous a: 4 А
- Количество транзисторов: 1
- Power Dissipation: 42 Вт
- Termination Type: Through Hole
- Полярность транзистора: N
- Voltage Vces: 600 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
