Datasheet IRG4BC20FD-SPBF - International Rectifier Даташит IGBT, D2-PAK — Даташит
Наименование модели: IRG4BC20FD-SPBF
6 предложений от 6 поставщиков IGBT N-CH W/DIODE 600V 16A D2PAK | |||
| IRG4BC20FD-SPBF International Rectifier | 416 ₽ | ||
| IRG4BC20FD-SPBF Infineon | по запросу | ||
| IRG4BC20FD-SPBF International Rectifier | по запросу | ||
| IRG4BC20FD-SPBF International Rectifier | по запросу | ||
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Подробное описание
Производитель: International Rectifier
Описание: IGBT, D2-PAK
Скачать Data SheetКраткое содержание документа:
PD -95965
IRG4BC20FD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
· Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 · IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations · Industry standard D2Pak package · Lead-Free · Generation 4 IGBTs offer highest efficiencies available · IGBTs optimized for specific application conditions · HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing · Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Спецификации:
- Тип транзистора: IGBT
- Max Voltage Vce Sat: 1.66 В
- Collector-to-Emitter Breakdown Voltage: 600 В
- Корпус транзистора: TO-263 (D2-PAK)
- Корпус: TO-263 (D2-PAK)
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Max Current Ic Continuous a: 16 А
- Max Fall Time: 290 нс
- Power Dissipation: 60 Вт
- Power Dissipation Pd: 60 Вт
- Pulsed Current Icm: 64 А
- Rise Time: 22 нс
- SMD Marking: IRG4BC20FDS
- Termination Type: SMD
- Полярность транзистора: N
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02
Варианты написания:
IRG4BC20FDSPBF, IRG4BC20FD SPBF
