Datasheet HGTG5N120BND - Fairchild Даташит IGBT, 1200 В, 21 А — Даташит
Наименование модели: HGTG5N120BND
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Подробное описание
Производитель: Fairchild
Описание: IGBT, 1200 В, 21 А
Скачать Data SheetКраткое содержание документа:
HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306.
Features
Спецификации:
- Тип транзистора: NPT
- DC Collector Current: 21 А
- Collector Emitter Voltage Vces: 2.7 В
- Power Dissipation Max: 167 Вт
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -55В°C to +150В°C
- Корпус транзистора: TO-247
- Количество выводов: 3
- SVHC: No SVHC (18-Jun-2010)
- Max Current Ic Continuous a: 21 А
- Package / Case: TO-247
- Power Dissipation: 167 Вт
- Termination Type: Through Hole
- Полярность транзистора: N
- Voltage Vces: 1200 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
