Datasheet Infineon BSS308PE — Даташит

BSS308PE OptiMOS™ P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS(on),max • Enhancement mode
• Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101
3 • 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
1
2 Type Package Tape and Reel Information Marking Lead Free Packing BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -2.0 T A=70 °C -1.6 Pulsed drain current I D,pulse T A=25 °C -8.0 Avalanche energy, single pulse E AS I D=-2 A, R GS=25 Ω -10.7 Reverse diode dv /dt dv /dt I D=-2 A,
V DS=-16V,
di /dt =-200A/µs,
T j,max=150 °C Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature
IEC climatic category; DIN IEC 68-1 Rev 2.03 page 1 6 Unit
A mJ kV/µs ±20 V 0.5 W -55 . 150 °C 2 (2kV to 4kV)
260 °C °C 55/150/56 °C 2011-07-08 BSS308PE
Parameter Values Symbol Conditions Unit min. typ. max. -250 -30 -Thermal characteristics
Thermal resistance,
junction -ambient R thJA minimal footprint1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA Gate threshold voltage V GS(th) V DS=VGS, I D=-11µA -2.0 -1.5 -1.0 Drain-source leakage current I DSS V DS=-30V, V GS=0 V,
T j=25 °C -1 V DS=-30V, V GS=0V,
T j=150 °C -100 V μA Gate-source leakage current I GSS V GS=-20V, V DS=0V -5 μA Drain-source on-state resistance R DS(on) V GS=-4.5 V,
I D=-1.7 A -88 130 mΩ V GS=-10 V, I D=-2 A -62 80 4.6 -Transconductance g fs |V DS|>2|I D|R DS(on)max,
I D=-1.6 A S 1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB. Rev 2.03 page 2 2011-07-08 BSS308PE …