KSD1691 KSD1691
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current
• High Power Dissipation: PC = 1.3W (Ta=25°C)
• Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO Collector-Base Voltage Parameter Value
60 Units
V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) PC Collector Dissipation (Ta=25°C) PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 60 V 7 V 1 A 1.3 W * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO Parameter
Collector Cut-off Current Test Condition
VCB = 50V, IE = 0 IEBO Emitter Cut-off Current VEB = 7V, IC = 0 hFE1
hFE2
hFE3 *DC Current Gain VCE = 1V, IC = 0.1A
VCE = 1V, IC = 2A
VCE = 1V, IC = 5A Min. Typ. 60
100
50 Max.
10 Units
µA 10 µA 400 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.1 0.3 VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.9 1.2 V
V tON Turn ON Time 0.2 1 µs tSTG Storage Time 1.1 2.5 µs tF Fall Time VCC = 10V, IC = 2A …
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