Datasheet IRGB14C40LPBF - International Rectifier Даташит IGBT, 430 В, 20 А, TO-220 — Даташит
Наименование модели: IRGB14C40LPBF
 Купить IRGB14C40LPBF на РадиоЛоцман.Цены — от 16 до 223 ₽16 предложений от 14 поставщиков Транзистор IGBT, Trans IGBT Chip N-CH 370V 20A 125000mW 3Pin(3+Tab) TO-220AB Tube | |||
| IRGB14C40LPBF Rochester Electronics | от 16 ₽ | ||
| IRGB14C40LPBF, IGBT 430В 14А TO220AB Infineon | 208 ₽ | ||
| IRGB14C40LPBF International Rectifier | 223 ₽ | ||
| IRGB14C40LPBF | по запросу | ||
Подробное описание
Производитель: International Rectifier
Описание: IGBT, 430 В, 20 А, TO-220
Скачать Data SheetКраткое содержание документа:
PD - 95193
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy TO-220 is available in PbF as a Lead-Free
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits.
Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits.
Absolute Maximum Ratings
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 20 А
- Collector Emitter Voltage Vces: 1.75 В
- Power Dissipation Max: 125 Вт
- Collector Emitter Voltage V(br)ceo: 430 В
- Корпус транзистора: TO-220
- Количество выводов: 3
- Clamping Voltage: 430 В
- Current Ic Continuous a Max: 20 А
- Current Temperature: 25°C
- Device Marking: IRGB14C40LPbF
- Fall Time Max: 2.8 нс
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 175°C
- Junction Temperature Tj Min: -40°C
- Количество транзисторов: 1
- Package / Case: TO-220
- Power Dissipation: 125 Вт
- Power Dissipation Pd: 125 Вт
- Rise Time: 2400 нс
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 430 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
