PDF, 801 Кб, Язык: анг., Файл закачен: 30 июл 2025, Страниц: 18
Silicon NPN Phototransistor in SMT Package
Выписка из документа
www.osram-os.com Produktdatenblatt | Version 1.1
SFH 320
SFH 320
TOPLED ®
Silicon NPN Phototransistor in SMT Package Applications —Electronic Equipment —White Goods Features: —Package: clear epoxy —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —Spectral range of sensitivity: (typ) 450 . 1150 nm —High linearity —P-LCC-2 package —Available in groups —Suitable for all soldering methods Ordering Information
Type SFH 320-3/4-Z Photocurrent 1)
VCE = 5 V; λ = 950 nm; Ee = 0.1 mW/cm²
IPCE Ordering Code 28 . 71 µA Q65110A1781 SFH 320-3-Z 28 . 45 µA Q65110A2469 SFH 320-Z 18 . 71 µA Q65110A2471 SFH 320-4-Z 45 . 71 µA Q65110A2510 Only one bin within one packing unit (variation less than 2:1) 1 Version 1.7 | 2021-11-22 SFH 320
Maximum Ratings
TA = 25 °C
Parameter Symbol Operating temperature Top min.
max. -40 °C
100 °C Storage temperature Tstg min.
max. -40 °C
100 °C Collector-emitter voltage VCE max. 35 V Collector current IC max. 15 mA Collector surge current
τ ≤ 10 µs ICS max. 75 mA Total power dissipation Ptot max. 165 mW ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 Version 1.7 | 2021-11-22 Values SFH 320
Characteristics
TA = 25 °C
Parameter Symbol Wavelength of max sensitivity λS max typ. 980 nm Spectral range of sensitivity λ10% typ. 450 . 1150
nm Dimensions of chip area LxW typ. 0.45 x 0.45
mm x mm Radiant sensitive area A typ. 0.038 mm² Half angle φ typ. 60 ° Photocurrent
VCE = 5 V; Std. Light A; Ev = 1000 lx IPCE typ. 650 µA Dark current …
