Datasheet IKW50N60T - Infineon Даташит IGBT, N, 600 В, 50 А, TO-247 — Даташит
Наименование модели: IKW50N60T
 Купить IKW50N60T на РадиоЛоцман.Цены — от 33 до 1 002 ₽27 предложений от 19 поставщиков IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode, Vce=600V, Ic=50A, Vce(sat)=1,5V, Ptot=333W | |||
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| IKW50N60T Infineon | по запросу | ||
| IKW50N60T | по запросу | ||
Подробное описание
Производитель: Infineon
Описание: IGBT, N, 600 В, 50 А, TO-247
Скачать Data SheetКраткое содержание документа:
TrenchStop® Series
IKW50N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking K50T60 Package PG-TO-247-3-21
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Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 80 А
- Collector Emitter Voltage Vces: 2 В
- Power Dissipation Max: 333 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Current Ic Continuous a Max: 50 А
- Количество транзисторов: 1
- Package / Case: TO-247
- Power Dissipation: 333 Вт
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 600 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02
