Datasheet IRG4BC20SDPBF - International Rectifier Даташит IGBT, 600 В, 19 А, TO-220 — Даташит
Наименование модели: IRG4BC20SDPBF
![]() 13 предложений от 12 поставщиков Транзистор IGBT, Trans IGBT Chip N-CH 600V 19A 60000mW 3Pin(3+Tab) TO-220AB Tube | |||
IRG4BC20SDPBF Infineon | от 30 ₽ | ||
IRG4BC20SDPBF Infineon | 68 ₽ | ||
IRG4BC20SDPBF Infineon | 78 ₽ | ||
IRG4BC20SDPBF, IGBT 600В 10А 1кГц TO220AB Infineon | 155 ₽ |
Подробное описание
Производитель: International Rectifier
Описание: IGBT, 600 В, 19 А, TO-220
Краткое содержание документа:
PD - 94939A
IRG4BC20SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· Extremely low voltage drop 1.4Vtyp.
@ 10A · S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. · Very Tight Vce(on) distribution · IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations · Industry standard TO-220AB package · Lead-Free
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 19 А
- Collector Emitter Voltage Vces: 1.6 В
- Power Dissipation Max: 60 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Operating Temperature Range: -55°C to +150°C
- Корпус транзистора: TO-220AB
- Current Ic Continuous a Max: 19 А
- Fall Time Max: 35 нс
- Package / Case: TO-220AB
- Power Dissipation: 60 Вт
- Power Dissipation Pd: 60 Вт
- Pulsed Current Icm: 38 А
- Rise Time: 35 нс
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 600 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5