Datasheet HGTG18N120BND - Fairchild Даташит IGBT, N, TO-247 — Даташит
Наименование модели: HGTG18N120BND
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Подробное описание
Производитель: Fairchild
Описание: IGBT, N, TO-247
Краткое содержание документа:
HGTG18N120BND
Data Sheet March 2007
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49304.
Features
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 54 А
- Collector Emitter Voltage Vces: 2.7 В
- Power Dissipation Max: 390 Вт
- Collector Emitter Voltage V(br)ceo: 1200 В
- Корпус транзистора: TO-247
- Количество выводов: 3
- SVHC: No SVHC (18-Jun-2010)
- Alternate Case Style: SOT-249
- Current Ic @ Vce Sat: 18 А
- Current Ic Continuous a Max: 54 А
- Device Marking: HGTG18N120BND
- Package / Case: TO-247
- Power Dissipation: 390 Вт
- Power Dissipation Pd: 390 Вт
- Pulsed Current Icm: 160 А
- Rise Time: 22 нс
- SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
- Termination Type: Through Hole
- Полярность транзистора: N
- Voltage Vces: 1200 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5