Datasheet HGTG20N60B3. - Fairchild Даташит IGBT,N CH,600V,40A,TO-247 — Даташит

Купить HGTG20N60B3. на РадиоЛоцман.Цены — от 58 до 675 ₽ 27 предложений от 23 поставщиков FAIRCHILD SEMICONDUCTOR HGTG20N60B3DIGBT Single Transistor, General Purpose, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins
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Подробное описание

Производитель: Fairchild

Описание: IGBT,N CH,600V,40A,TO-247

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Краткое содержание документа:
HGTG20N60B3
Data Sheet October 2004
40A, 600V, UFS Series N-Channel IGBTs
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49050.
Features

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 40 А
• Collector Emitter Voltage Vces: 2 В
• Power Dissipation Max: 165 Вт
• Collector Emitter Voltage V(br)ceo: 600 В
• Operating Temperature Range: -40°C to +150°C
• Корпус транзистора: TO-247
• Количество выводов: 3

RoHS: есть