Datasheet HGTG27N120BN - Fairchild Даташит IGBT, N 72 А, 1200 В TO-247 — Даташит
Наименование модели: HGTG27N120BN
 Купить HGTG27N120BN на РадиоЛоцман.Цены — от 2.90 до 2 880 ₽28 предложений от 18 поставщиков Биполярные транзисторы с изолированным затвором (IGBT) 72A 1200V NPT Series N-Ch IGBT | |||
| HGTG27N120BN | от 2.90 ₽ | ||
| HGTG27N120BN ON Semiconductor | 752 ₽ | ||
| HGTG27N120BN | 2 880 ₽ | ||
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Подробное описание
Производитель: Fairchild
Описание: IGBT, N 72 А, 1200 В TO-247
Скачать Data SheetКраткое содержание документа:
HGTG27N120BN / HGT5A27N120BN
Data Sheet October 2004
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49280.
Features
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 72 А
- Collector Emitter Voltage Vces: 2.7 В
- Power Dissipation Max: 500 Вт
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -55°C to +150°C
- Корпус транзистора: TO-247
- Количество выводов: 3
- Current Ic Continuous a Max: 72 А
- Package / Case: TO-247
- Power Dissipation: 500 Вт
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 1200 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
