Datasheet HGTG30N60A4D - Fairchild Даташит IGBT, TO-247 — Даташит

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Подробное описание

Производитель: Fairchild

Описание: IGBT, TO-247

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Краткое содержание документа:
HGTG30N60A4D
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
Features

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 75 А
• Collector Emitter Voltage Vces: 2.6 В
• Power Dissipation Max: 463 Вт
• Collector Emitter Voltage V(br)ceo: 600 В
• Корпус транзистора: TO-247
• Количество выводов: 3
• SVHC: No SVHC (18-Jun-2010)
• Alternate Case Style: SOT-249
• Current Ic Continuous a Max: 75 А
• Current Temperature: 25°C
• Device Marking: HGTG30N60A4D
• Fall Time Typ: 38 нс
• Fall Time tf: 38 нс
• Full Power Rating Temperature: 25°C
• Количество транзисторов: 1
• Package / Case: TO-247
• Pin Configuration: With flywheel diode
• Power Dissipation: 463 Вт
• Power Dissipation Pd: 463 Вт
• Pulsed Current Icm: 240 А
• Rise Time: 12s
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: Through Hole
• Полярность транзистора: N Channel
• Voltage Vces: 600 В

RoHS: есть

Дополнительные аксессуары:

• Fischer Elektronik - WLK 5