Datasheet HGTG30N60C3D - Fairchild Даташит IGBT,N CH,600V,30A,TO-247 — Даташит

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Подробное описание

Производитель: Fairchild

Описание: IGBT,N CH,600V,30A,TO-247

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Краткое содержание документа:
HGTG30N60C3D
Data Sheet January 2009 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 63 А
• Collector Emitter Voltage Vces: 1.8 В
• Power Dissipation Max: 208 Вт
• Collector Emitter Voltage V(br)ceo: 600 В
• Operating Temperature Range: -40°C to +150°C
• Корпус транзистора: TO-247
• Количество выводов: 3

RoHS: есть