Datasheet NXP BAT82 — Даташит

DISCRETE SEMICONDUCTORS DATA SHEET
k, halfpage M3D050 BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. • High breakdown voltage
• Guard ring protected
• Hermetically-sealed leaded glass
package
• Low diode capacitance. k
handbook, halfpage a APPLICATIONS
MAM193 • Ultra high-speed switching
• Voltage clamping
• Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. • Blocking diodes. LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage
BAT81 − 40 V BAT82 − 50 V BAT83 − 60 V − 30 mA IF continuous forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 150 mA IFSM non-repetitive peak forward current tp ≤ 10 ms − 500 mA Tstg storage temperature −65 150 °C Tj junction temperature − 125 °C 1996 Mar 20 2 Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF PARAMETER
forward voltage CONDITIONS MAX. UNIT see Fig.2 …