Datasheet IKP01N120H2 - Infineon Даташит IGBT, N, 1200 В, 1.3 А, TO-220 — Даташит
Наименование модели: IKP01N120H2
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Подробное описание
Производитель: Infineon
Описание: IGBT, N, 1200 В, 1.3 А, TO-220
Скачать Data SheetКраткое содержание документа:
IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
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Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Pb-free lead plating; RoHS compliant 2 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 1A Eoff 0.09mJ Tj 150°C Marking K01H1202 Package PG-TO-220-3-1
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 3.2 А
- Collector Emitter Voltage Vces: 2.8 В
- Power Dissipation Max: 28 Вт
- Collector Emitter Voltage V(br)ceo: 1200 В
- Operating Temperature Range: -40°C to +150°C
- Корпус транзистора: TO-220
- Current Ic Continuous a Max: 1.3 А
- Количество транзисторов: 1
- Package / Case: TO-220
- Power Dissipation: 28 Вт
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 1200 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
