Datasheet IKP03N120H2 - Infineon Даташит IGBT, N, 1200 В, 3.9 А, TO-220 — Даташит
Наименование модели: IKP03N120H2
 Купить IKP03N120H2 на РадиоЛоцман.Цены — от 19 до 105 ₽11 предложений от 11 поставщиков Транзистор IGBT, Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3Pin(3+Tab) TO-220AB Tube | |||
| IKP03N120H2XKSA1 Infineon | 69 ₽ | ||
| IKP03N120H2XKSA1 Infineon | 85 ₽ | ||
| IKP03N120H2XKSA1 Infineon | 105 ₽ | ||
| IKP03N120H2XKSA1 Infineon | по запросу | ||
Подробное описание
Производитель: Infineon
Описание: IGBT, N, 1200 В, 3.9 А, TO-220
Скачать Data SheetКраткое содержание документа:
IKP03N120H2 IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj 150°C 150°C Marking K03H1202 K03H1202 Package PG-TO-247-3-21 PG-TO-220-3-1
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 9.6 А
- Collector Emitter Voltage Vces: 2.8 В
- Power Dissipation Max: 62.5 Вт
- Collector Emitter Voltage V(br)ceo: 1200 В
- Operating Temperature Range: -40°C to +150°C
- Корпус транзистора: TO-220
- Current Ic Continuous a Max: 3.9 А
- Количество транзисторов: 1
- Package / Case: TO-220
- Power Dissipation: 62.5 Вт
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 1200 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
