Datasheet IKW30N60T - Infineon Даташит IGBT, N, 600 В, 30 А, TO-247 — Даташит
Наименование модели: IKW30N60T
 Купить IKW30N60T на РадиоЛоцман.Цены — от 33 до 1 200 ₽33 предложений от 18 поставщиков Транзистор IGBT, Trans IGBT Chip N-CH 600V 45A 187000mW 3Pin(3+Tab) TO-247 Tube | |||
| IKW30N60T | от 175 ₽ | ||
| IKW30N60T, TO-247 Infineon | 472 ₽ | ||
| IKW30N60T | 1 200 ₽ | ||
| IKW30N60T=K30T60 Infineon | по запросу | ||
Подробное описание
Производитель: Infineon
Описание: IGBT, N, 600 В, 30 А, TO-247
Скачать Data SheetКраткое содержание документа:
TrenchStop® Series
IKW30N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Uninterruptible Power Supply ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking K30T60 Package PG-TO-247-3-21
C
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 60 А
- Collector Emitter Voltage Vces: 2.05 В
- Power Dissipation Max: 187 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Current Ic Continuous a Max: 25 А
- Количество транзисторов: 1
- Package / Case: TO-247
- Power Dissipation: 187 Вт
- Termination Type: Through Hole
- Полярность транзистора: N Channel
- Voltage Vces: 600 В
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02
