Datasheet HGTG11N120CND - Fairchild Даташит IGBT, N — Даташит
Наименование модели: HGTG11N120CND
 Купить HGTG11N120CND на РадиоЛоцман.Цены — от 1.58 до 1 032 ₽52 предложений от 23 поставщиков БТИЗ транзистор, 43 А, 2.4 В, 298 Вт, 1.2 кВ, TO-247, 3 вывод(-ов) | |||
| HGTG11N120CND ON Semiconductor | от 344 ₽ | ||
| HGTG11N120CND-VB | 425 ₽ | ||
| HGTG11N120CND ON Semiconductor | 510 ₽ | ||
| HGTG11N120CND Fairchild | по запросу | ||
Подробное описание
Производитель: Fairchild
Описание: IGBT, N
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HGTG11N120CND
Data Sheet December 2001
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303.
Features
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 43 А
- Collector Emitter Voltage Vces: 2.4 В
- Power Dissipation Max: 298 Вт
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Корпус транзистора: TO-247
- Количество выводов: 3
- Current Ic Continuous a Max: 43 А
- Package / Case: TO-247
- Power Dissipation: 298 Вт
- Termination Type: SMD
- Полярность транзистора: N Channel
- Voltage Vces: 1200 В
RoHS: есть
