Datasheet Vishay Si4936DY — Даташит

Si4936DY
Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET 30 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D1 D1 D2 D2 SO-8
S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View
S1 S2 N-Channel MOSFET N-Channel MOSFET Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)
150 C)A TA = 25C
TA = 70C Pulsed Drain Current
Continuous Source Current (Diode Conduction)A
TA = 25C Maximum Power Dissipation
Dissi ationA TA = 70C
Operating Junction and Storage Temperature Range ID V 5.8
4.6 IDM 30 IS 1.7 A 2
PD W
1.3 TJ, Tstg –55 to 150 C RthJA 62.5 C/W Maximum Junction-to-AmbientA
Notes
A. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70150.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors 3-1 Si4936DY
Vishay Siliconix VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55C 25 Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current IDSS On-State Drain CurrentB ID(on) Drain-Source On-State ResistanceB rDS(on) Forward TransconductanceB …