Datasheet IGW50N60T - Infineon Даташит IGBT,600V,50A,TO247 — Даташит
Наименование модели: IGW50N60T
![]() 31 предложений от 14 поставщиков Транзистор: IGBT; 600В; 64А; 333Вт; TO247-3; одиночный транзистор | |||
IGW50N60T | от 174 ₽ | ||
IGW50N60T Infineon | 547 ₽ | ||
IGW50N60T Infineon | по запросу | ||
IGW50N60T - Infineon Technologies Infineon | по запросу |
Подробное описание
Производитель: Infineon
Описание: IGBT,600V,50A,TO247
Краткое содержание документа:
TrenchStop® Series
IGP50N60T IGW50N60T
Low Loss IGBT in TrenchStop® and Fieldstop technology
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V 600 V IC 50 A 50 A VCE(sat),Tj=25°C 1.5 V 1.5 V Tj,max 175 °C 175 °C Marking G50T60 G50T60 Package PG-TO-220-3-1 PG-TO-247-3
C
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 50 А
- Collector Emitter Voltage Vces: 2 В
- Power Dissipation Max: 333 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Количество выводов: 3
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - THFU 2