Datasheet IGW75N60T - Infineon Даташит IGBT,600V,75A,TO247 — Даташит
Наименование модели: IGW75N60T
![]() 35 предложений от 16 поставщиков Транзистор IGBT, INFINEON IGW75N60T IGBT Single Transistor, 75A, 2V, 428W, 600V, TO-247, 3Pins | |||
IGW75N60T Infineon | от 519 ₽ | ||
IGW75N60T Infineon | от 519 ₽ | ||
IGW75N60T Infineon | от 683 ₽ | ||
IGW75N60T Infineon | 758 ₽ |
Подробное описание
Производитель: Infineon
Описание: IGBT,600V,75A,TO247
Краткое содержание документа:
TrenchStop® Series
IGW75N60T q
Low Loss IGBT in TrenchStop® and Fieldstop technology
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 75A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking G75T60 Package PG-TO-247-3
C
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 75 А
- Collector Emitter Voltage Vces: 2 В
- Power Dissipation Max: 428 Вт
- Collector Emitter Voltage V(br)ceo: 600 В
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Количество выводов: 3
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - THFU 2