Datasheet IHW15N120R3 - Infineon Даташит IGBT+ DIODE,1200V,15A,TO247 — Даташит
Наименование модели: IHW15N120R3
![]() 57 предложений от 24 поставщиков Транзистор: IGBT; TRENCHSTOPTM RC; 1,2кВ; 15А; 127Вт; TO247-3 | |||
IHW15N120R3 Infineon | 83 ₽ | ||
IHW15N120R3 | от 146 ₽ | ||
IHW15N120R3FKSA1 Infineon | от 216 ₽ | ||
Транзистор IGBT IHW15N120R3 /H15R1203/ | 328 ₽ |
Подробное описание
Производитель: Infineon
Описание: IGBT+ DIODE,1200V,15A,TO247
Краткое содержание документа:
IHW15N120R3
IH-series
Reverse conducting IGBT with monolithic body diode
Features: · Powerful monolithic body diode with low forward voltage designed for soft commutation only · TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat · Low EMI · Qualified according to JEDEC J-STD-020 and JESD-022 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: · Inductive cooking
C G E
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 15 А
- Collector Emitter Voltage Vces: 1.7 В
- Power Dissipation Max: 254 Вт
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Количество выводов: 3
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - THFU 2