Datasheet IHW25N120R2 - Infineon Даташит IGBT+ DIODE,1200V,25A,TO247 — Даташит

Купить IHW25N120R2 на РадиоЛоцман.Цены — от 95 до 1 168 ₽ 19 предложений от 16 поставщиков Транзистор IGBT, Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3Pin
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Подробное описание

Производитель: Infineon

Описание: IGBT+ DIODE,1200V,25A,TO247

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Краткое содержание документа:
IHW25N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: · Powerful monolithic Body Diode with very low forward voltage · Body diode clamps negative voltages · Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior · NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) · Low EMI · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: · Inductive Cooking · Soft Switching Applications Type IHW25N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 25 А
• Collector Emitter Voltage Vces: 1.8 В
• Power Dissipation Max: 365 Вт
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C to +175°C
• Корпус транзистора: TO-247
• Количество выводов: 3

RoHS: есть

Дополнительные аксессуары:

• Fischer Elektronik - THFU 2