Datasheet IHW30N120R2 - Infineon Даташит IGBT+ DIODE,1200V,30A,TO247 — Даташит
Наименование модели: IHW30N120R2
 Купить IHW30N120R2 на РадиоЛоцман.Цены — от 26 до 375 ₽20 предложений от 15 поставщиков Транзистор IGBT, Trans IGBT Chip N-CH 1.2kV 30A 3Pin(3+Tab) TO-247 | |||
| Транзистор биполярный H30R1202 (IHW30N120R2) | 152 ₽ | ||
| IHW30N120R2 | 315 ₽ | ||
| IHW30N120R2 (H30R1202) | от 375 ₽ | ||
| IHW30N120R2_09 Infineon | по запросу | ||
Подробное описание
Производитель: Infineon
Описание: IGBT+ DIODE,1200V,30A,TO247
Скачать Data SheetКраткое содержание документа:
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: · Powerful monolithic Body Diode with very low forward voltage · Body diode clamps negative voltages · TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior · NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) · Low EMI · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: · Inductive Cooking · Soft Switching Applications Type IHW30N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by T
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 30 А
- Collector Emitter Voltage Vces: 1.8 В
- Power Dissipation Max: 390 Вт
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Количество выводов: 3
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - THFU 2
