Datasheet Infineon IGB03N120H2 — Даташит

IGB03N120H2 HighSpeed 2-Technology
C • Designed for frequency inverters for washing
machines, fans, pumps and vacuum cleaners • 2 generation HighSpeed-Technology
for 1200V applications offers:
-loss reduction in resonant circuits
-temperature stable behavior
-parallel switching capability
-tight parameter distribution
-Eoff optimized for IC =3A •
•
• Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G nd E 2 Type
IGB03N120H2 PG-TO263-3-2 VCE IC Eoff Tj Marking Package 1200V 3A 0.15mJ 150°C G03H1202 PG-TO263-3-2 Maximum Ratings
Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector current IC A
9.6
3.9 TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax ICpul s 9.9 Turn off safe operating area -9.9 Gate-emitter voltage VGE ±20 V Power dissipation Ptot 62.5 W -40.+150 °C VCE ≤ 1200V, Tj ≤ 150°C TC = 25°C
Operating junction and storage temperature Tj , Tstg Soldering temperature (reflow soldering, MSL1) -2 245 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.4 Oct. 07 IGB03N120H2
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit RthJC 2.0 K/W RthJA 40 Characteristic
IGBT thermal resistance, …