2N5771 / MMBT5771 2N5771 MMBT5771
C E
C B TO-92
B SOT-23 E Mark: 3R PNP Switching Transistor
This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics. Absolute Maximum Ratings*
Symbol TA = 25В°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current -Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 В°C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics
Symbol
PD TA = 25В°C unless otherwise noted Characteristic RОёJC Total Device Dissipation
Derate above 25В°C
Thermal Resistance, Junction to Case RОёJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." пЈ© 1997 Fairchild Semiconductor Corporation Max Units 2N5771
350
2.8
125 *MMBT5771
225
1.8 357 556 mW
mW/В°C
В°C/W …
