Datasheet Infineon BC856BW — Даташит

BC856W.BC860W
PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W (NPN) Pin Configuration VSO05561 Type Marking BC856BW 3Bs 1=B 2=E 3=C SOT323 BC857AW 3Es 1=B 2=E 3=C SOT323 BC857BW 3Fs 1=B 2=E 3=C SOT323 BC857CW 3Gs 1=B 2=E 3=C SOT323 BC858BW 3Ks 1=B 2=E 3=C SOT323 BC858CW 3Ls 1=B 2=E 3=C SOT323 BC859AW 4As 1=B 2=E 3=C SOT323 BC860BW 4Fs 1=B 2=E 3=C SOT323 BC860CW 4Gs 1=B 2=E 3=C SOT323 1 Package Jan-28-2005 Package SOT323 Package Outline
2 ±0.2 0.9 ±0.1 0.3 +0.1
-0.05 3x
0.1 0.1 MAX.
M 1 2 1.25 ±0.1 0.1
0.1 MIN. +0.2
acc. to
DIN 6784 2.1 ±0.1 A
3 0.15 +0.1
-0.05 0.65 0.65
0.2 M A Foot Print 0.8 1.6 0.6 0.65
0.65 Marking Layout
Manufacturer Pin 1 Type code BCR108W Example Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
0.2 2.3 8 4 Pin 1 2.15 1.1 BC856W.BC860W Maximum Ratings
Parameter Symbol BC856W BC857W BC858W Unit
BC860W BC859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 . 150 Thermal Resistance Junction -soldering point1) ≤105 RthJS K/W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter …