Datasheet NTE210 - NTE Electronics Даташит Биполярный транзистор, NPN, 75 В — Даташит
Наименование модели: NTE210
Silicon Complementary Transistors General Purpose Output & Driver | |||
NTE210 | по запросу | ||
NTE210 NTE Electronics | по запросу |
Подробное описание
Производитель: NTE Electronics
Описание: Биполярный транзистор, NPN, 75 В
Краткое содержание документа:
NTE210 (NPN) & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver
Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features: D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . .
Спецификации:
- Полярность транзистора: NPN
- Collector Emitter Voltage V(br)ceo: 75 В
- Transition Frequency Typ ft: 375 МГц
- Power Dissipation Pd: 1.67 Вт
- DC Collector Current: 1 А
- DC Current Gain Max (hfe): 120
RoHS: есть