Datasheet NSS12201LT1G - ON Semiconductor Даташит Биполярный транзистор, NPN, 12 В SOT-23 — Даташит
Наименование модели: NSS12201LT1G
 Купить NSS12201LT1G на РадиоЛоцман.Цены — от 4.23 до 86 ₽37 предложений от 16 поставщиков Биполярный транзистор, NPN, 12 В, 2 А, 540 мВт, SOT-23, Surface Mount | |||
| NSS12201LT1G ON Semiconductor | 11 ₽ | ||
| NSS12201LT1G | 36 ₽ | ||
| NSS12201LT1G ON Semiconductor | от 86 ₽ | ||
| NSS12201LT1G ON Semiconductor | по запросу | ||
Подробное описание
Производитель: ON Semiconductor
Описание: Биполярный транзистор, NPN, 12 В SOT-23
Скачать Data SheetКраткое содержание документа:
NSS12201LT1G 12 V, 4.0 A, Low VCE(sat) NPN Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability.
These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. · These Devices are Pb-Free, Halogen Fr
Данные для моделированияСпецификации:
- Полярность транзистора: NPN
- Collector Emitter Voltage V(br)ceo: 12 В
- Transition Frequency Typ ft: 150 МГц
- Power Dissipation Pd: 540 мВт
- DC Collector Current: 4 А
- DC Current Gain Max (hfe): 330
RoHS: есть
