Datasheet NSS12100M3T5G - ON Semiconductor Даташит Биполярный транзистор, PNP, -12 В — Даташит
Наименование модели: NSS12100M3T5G
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Подробное описание
Производитель: ON Semiconductor
Описание: Биполярный транзистор, PNP, -12 В
Скачать Data SheetКраткое содержание документа:
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability.
These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Features http://onsemi.com
12 VOLTS, 1.0
Данные для моделированияСпецификации:
- Полярность транзистора: P Channel
- Collector Emitter Voltage V(br)ceo: 12 В
- Power Dissipation Pd: 480 мВт
- DC Collector Current: 3 А
- DC Current Gain Max (hfe): 200
- Рабочий диапазон температрур: -55°C ... +150°C
RoHS: есть
