Datasheet ZXMP2120E5 - Diodes Даташит Полевой транзистор, P, SOT23-5 — Даташит
Наименование модели: ZXMP2120E5
![]() 12 предложений от 12 поставщиков Труба MOS, Trans MOSFET P-CH 200V 0.122A Automotive 5Pin SOT-23 T/R | |||
ZXMP2120E5TA Diodes | 23 ₽ | ||
ZXMP2120E5TA Diodes | 29 ₽ | ||
ZXMP2120E5TA Diodes | по запросу | ||
ZXMP2120E5TA Diodes | по запросу |
Подробное описание
Производитель: Diodes
Описание: Полевой транзистор, P, SOT23-5
Краткое содержание документа:
ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.
Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES
SOT23-5
· High voltage · Low on-resistance · Fast switching speed · Low gate drive · Low threshold · SOT23-5 package variant engineered to increase spacing between
Спецификации:
- Полярность транзистора: P Channel
- Continuous Drain Current Id: 122 мА
- Drain Source Voltage Vds: 200 В
- On Resistance Rds(on): 28 Ом
- Rds(on) Test Voltage Vgs: 10 В
- Корпус транзистора: SOT-23
- Количество выводов: 5
- SVHC: No SVHC (15-Dec-2010)
- Тип корпуса: SOT-23
- Power Dissipation Pd: 750 мВт
- Pulse Current Idm: 700 мА
- Способ монтажа: SMD
- Threshold Voltage Vgs Typ: -3.5 В
- Voltage Vds Typ: -200 В
- Voltage Vgs Rds on Measurement: -10 В
- Voltage Vgs th Min: -1.5 В
RoHS: есть