Datasheet HUF75639P3 - Fairchild Даташит Полевой транзистор, N CH, 100 В, 56 А, TO-220AB — Даташит
Наименование модели: HUF75639P3
Купить HUF75639P3 на РадиоЛоцман.Цены — от 24 до 419 ₽ 33 предложений от 20 поставщиков Силовой МОП-транзистор, N Канал, 100 В, 56 А, 0.021 Ом, TO-220AB, Through Hole | |||
HUF75639P3 (ST-STP60NF10) STMicroelectronics | 24 ₽ | ||
HUF75639P3_NL Fairchild | 93 ₽ | ||
HUF75639P3_NL Fairchild | по запросу | ||
HUF75639P3S2091 Fairchild | по запросу |
Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, N CH, 100 В, 56 А, TO-220AB
Краткое содержание документа:
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Data Sheet December 2001
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75639.
Features
Спецификации:
- Полярность транзистора: N Channel
- Drain Source Voltage Vds: 100 В
- On Resistance Rds(on): 21 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Voltage Vgs Max: 20 В
- Рабочий диапазон температрур: -55°C ... +175°C
- Корпус транзистора: TO-220AB
- Количество выводов: 3
- SVHC: No SVHC (15-Dec-2010)
- Current Id Max: 56 А
- Power Dissipation Pd: 200 Вт
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - FK 245 MI 247 V
- MULTICORE (SOLDER) - 1399095-M